✦ LIBER ✦

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

✍ Scribed by Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; Jianping Li; Hongxin Liu; Yanling Chen; Fuhua Yang; Jinmin Li

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 262 KB
Volume: 39
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2008.01.083

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✦ Synopsis

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm Â 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mm and a gate width of 60 mm demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mA/mm at the gate voltage of À10 V.

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Growth and fabrication of AlGaN/GaN HEMT based on Si(1&#xa0;1&#xa0;1) substrates by MOCVD

✦ Synopsis

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD