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Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates

✍ Scribed by R.M. Kemper; M. Weinl; C. Mietze; M. Häberlen; T. Schupp; E. Tschumak; J.K.N. Lindner; K. Lischka; D.J. As

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
669 KB
Volume
323
Category
Article
ISSN
0022-0248

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✦ Synopsis

Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process and thus is a potential alternative to the conventional top-down fabrication techniques.

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