Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the fir
Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane
β Scribed by Yuzuru Narita; Masayuki Harashima; Kanji Yasui; Tadashi Akahane; Masasuke Takata
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 362 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
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