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Initial growth of MnAs on GaAs(0 0 1)-c(4×4) reconstructed surface

✍ Scribed by Toshiaki Arai; Motoo Suzuki; Yuriko Ueno; Jun Okabayashi; Junji Yoshino

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
366 KB
Volume
40
Category
Article
ISSN
1386-9477

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✦ Synopsis

We have investigated the initial growth mechanism of MnAs on GaAs(0 0 1)-c(4 Â 4)a reconstructed surfaces. We found that the MnAs deposition on GaAs(0 0 1)-c(4 Â 4)a surface promotes to break the Ga-As asymmetric dimers and modulates the dimer characteristics to symmetric As-As dimer formation on the surfaces. The Ga atoms consisting of c(4 Â 4)a reconstructed surface are contributed to the anomaly in the surface coverage during the MnAs growth. We also found that 1 ML zinc-blende-type layer is realized by the MnAs growth and then hexagonal NiAs-type MnAs islands are formed on the surface.

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