We have investigated the initial growth mechanism of MnAs on GaAs(0 0 1)-c(4 Â 4)a reconstructed surfaces. We found that the MnAs deposition on GaAs(0 0 1)-c(4 Â 4)a surface promotes to break the Ga-As asymmetric dimers and modulates the dimer characteristics to symmetric As-As dimer formation on th
✦ LIBER ✦
Anisotropic strain relaxation of thin Fe film on c(4×4) reconstructed GaAs (0 0 1) surface
✍ Scribed by J. Lu; P.F. Xu; Y.G. Zhu; H.J. Meng; L. Chen; W.Z. Wang; X.H. Zhang; J.H. Zhao; G.Q. Pan
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 266 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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