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Epitaxial growth of (1 0 0)-oriented β-FeSi2 film on 3CSiC(1 0 0) plane

✍ Scribed by Kensuke Akiyama; Teiko Kadowaki; Yasuo Hirabayashi; Mamoru Yoshimoto; Hiroshi Funakubo; Satoru Kaneko

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
815 KB
Volume
316
Category
Article
ISSN
0022-0248

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✦ Synopsis

a b s t r a c t

(1 0 0)-oriented b-FeSi 2 films were epitaxially grown on 3C-SiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the b-FeSi 2 800 diffraction peaks was 1.81. The epitaxial relationship between b-FeSi 2 and 3C-SiC was identified as Type B. The domain size leading to minimum domain coherent strain was smaller when the epitaxial relationship was Type B than when it was Type A, indicating that the epitaxial relationship between the b-FeSi 2 and 3C-SiC was Type B.

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