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Epitaxy relationships between Ge-islands and SiC(0 0 0 1)

✍ Scribed by K. Aït-Mansour; D. Dentel; L. Kubler; M. Diani; J.L. Bischoff; D. Bolmont


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
416 KB
Volume
241
Category
Article
ISSN
0169-4332

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We have investigated the oxidation behavior of MBE grown epitaxial Y(0 0 0 1)/Nb(1 1 0) films on sapphire ð1 1 2 0Þ substrates at elevated temperatures under atmospheric conditions with a combination of experimental methods. At room temperature X-ray diffraction (XRD) reveals the formation of a 25 A