We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Â 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was
✦ LIBER ✦
Growth and structural properties of crystalline LaAlO3 on Si (0 0 1)
✍ Scribed by J.W. Reiner; A. Posadas; M. Wang; T.P. Ma; C.H. Ahn
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 243 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0167-9317
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