(Ga,Mn)As on patterned GaAs(0 0 1) substrates: Growth and magnetotransport
β Scribed by W. Limmer; J. Daeubler; M. Glunk; T. Hummel; W. Schoch; R. Sauer
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 246 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0026-2692
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Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the fir
We investigated the growth of GaAs 1Γx Sb x (x ΒΌ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM