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Diffusion effect-induced InNAs films growth on GaAs (1 0 0) substrates by MOCVD

✍ Scribed by F.W. Yan; Y. Naoi; M. Tsukihara; S. Kawamichi; T. Yadani; K. Sumiyoshi; S. Sakai


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
151 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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The spontaneous Hall e ect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes alon