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Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates

✍ Scribed by K.-J. Friedland; R. Nötzel; H.-P. Schönherr; A. Riedel; H. Kostial; K.H. Ploog

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
211 KB
Volume
10
Category
Article
ISSN
1386-9477

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✦ Synopsis

The spontaneous Hall e ect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes along the [ 2 3 3] and [1 1 0] direction for the GaAs (3 1 1)A and GaAs(3 3 1)A substrates, respectively. A non-vanishing transverse magnetoresistance appears even for in-plane magnetic ÿelds. We identify the origin of the non-vanishing transverse magnetoresistance as the spin-orbit interaction between conducting electrons and impurities. Di erent models, including out-of-plane magnetisation of the Fe-layers grown on high index GaAs substrates due to the stepped heterointerface and spin-orbit interaction governed by the magneto-crystalline anisotropy of bulk Fe or of the heterointerface, are discussed to explain the unusual 'in-plane Hall e ect'.

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