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Dislocation-limited electron transport in InSb grown on GaAs(0 0 1)

✍ Scribed by T. Sato; T. Suzuki; S. Tomiya; S. Yamada

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 190 KB
Volume: 376-377
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2005.12.146

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✦ Synopsis

We investigated dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(0 0 1). It is found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which indicates that the former is the origin of the latter. This behavior is well explained by pair annihilation mechanism of the threading dislocations. The electron mobility is limited by ionized donor scattering, i.e. charged dislocation scattering.

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Dislocation-limited electron transport in InSb grown on GaAs(0&#xa0;0&#xa0;1)

✦ Synopsis

Dislocation-limited electron transport in InSb grown on GaAs(0 0 1)