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AFM observation of OMVPE grown ErP on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates

✍ Scribed by T. Kuno; T. Akane; S. Jinno; T. Hirata; Y. Yang; Y. Isogai; N. Watanabe; Y. Fujiwara; A. Nakamura; Y. Takeda

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
294 KB
Volume
6
Category
Article
ISSN
1369-8001

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✦ Synopsis

ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the ErP islands on (1 1 1)A substrate exhibit an obvious dependence on growth temperature. ErP islands grown at 540 C, that is the suitable temperature for ErP formation, gather to step edges to make wires.

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