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MBE growth and characterization of GaAs1−xSbx epitaxial layers on Si (0 0 1) substrates

✍ Scribed by T. Toda; F. Nishino; A. Kato; T. Kambayashi; Y. Jinbo; N. Uchitomi

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 217 KB
Volume: 376-377
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2005.12.152

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✦ Synopsis

We investigated the growth of GaAs 1Àx Sb x (x ¼ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), and micro-Raman scattering analysis. We confirmed that GaAs 1Àx Sb x layers have been successfully grown on Si substrates by introducing AlSb layers.

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MBE growth and characterization of GaAs1−xSbx epitaxial layers on Si (0&#xa0;0&#xa0;1) substrates

✦ Synopsis

MBE growth and characterization of GaAs1−xSbx epitaxial layers on Si (0 0 1) substrates