𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(1 1 1) and Si(0 0 1) substrates

✍ Scribed by Tobias F. Wietler; Eberhard Bugiel; Karl R. Hofmann

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
258 KB
Volume
9
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

AFM observation of OMVPE grown ErP on In
AFM observation of OMVPE grown ErP on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates
✍ T. Kuno; T. Akane; S. Jinno; T. Hirata; Y. Yang; Y. Isogai; N. Watanabe; Y. Fuji πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 294 KB

ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the

Gompertz type dechanneling functions for
Gompertz type dechanneling functions for protons in γ€ˆ1 0 0〉, γ€ˆ1 1 0〉 and γ€ˆ1 1 1〉 Si crystal channels
✍ S. PetroviΔ‡; M. EriΔ‡; M. Kokkoris; N. NeΕ‘koviΔ‡ πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 164 KB

In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters for protons in h1 0 0i, h1 1 0i and h1 1 1i Si crystal channels is investigated theoretically. The proton energy range considered is between 1 and 10 MeV. The original dechanneling functions are gener