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Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0 0 1) and epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) structures

✍ Scribed by D.O. Shin; M.R. Sardela Jr.; S.H. Ban; N.-E. Lee; K.-H. Shim

No coin nor oath required. For personal study only.

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Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0&#xa0;0&#xa0;1) and epi-CoSi2/Si0.83Ge0.17/Si(0&#xa0;0&#xa0;1) structures