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Growth and characterization of strain-relaxed SiGe buffer layers on Si(0 0 1) substrates with pure-edge misfit dislocations

✍ Scribed by Noriyuki Taoka; Akira Sakai; Tomohiro Egawa; Osamu Nakatsuka; Shigeaki Zaima; Yukio Yasuda

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 318 KB
Volume: 8
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2004.09.057

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