Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer

✍ Scribed by Takeo Yamamoto; Akira Sakai; Tomohiro Egawa; Noriyuki Taoka; Osamu Nakatsuka; Shigeaki Zaima; Yukio Yasuda

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 378 KB
• Volume: 224
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2003.08.082