✦ LIBER ✦

Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(0 0 1) substrates

✍ Scribed by Shaojian Su; Wei Wang; Buwen Cheng; Guangze Zhang; Weixuan Hu; Chunlai Xue; Yuhua Zuo; Qiming Wang

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 736 KB
Volume: 317
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.01.015

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✦ Synopsis

Single-crystal Ge 1 À x Sn x alloys (x ¼ 0.025, 0.052, and 0.078) with diamond cubic structure have been grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE), using high-quality Ge thin films as buffer layers. The Ge 1 À x Sn x alloys are nearly fully strained and have high crystalline quality without Sn surface segregation, revealed by the measurements of high resolution X-ray diffraction (HRXRD), Rutherford backscattering spectra (RBS), and transmission electron microscopy (TEM). In addition, thermal stability investigations show that the alloy with Sn composition of about 2.5% can be stable at 500 1C, which may enable it for device applications.

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Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(0&#xa0;0&#xa0;1) substrates

✦ Synopsis

Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(0 0 1) substrates