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Flattening of low temperature epitaxial Ge1−xSnx/Ge/Si(1 0 0) alloys via mass transport during post-growth annealing

✍ Scribed by Wei Wang; Shaojian Su; Jun Zheng; Guangze Zhang; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
948 KB
Volume
257
Category
Article
ISSN
0169-4332

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✍ Shaojian Su; Wei Wang; Buwen Cheng; Guangze Zhang; Weixuan Hu; Chunlai Xue; Yuhu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 736 KB

Single-crystal Ge 1 À x Sn x alloys (x ¼ 0.025, 0.052, and 0.078) with diamond cubic structure have been grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE), using high-quality Ge thin films as buffer layers. The Ge 1 À x Sn x alloys are nearly fully strained and have high crystalline qual