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Temperature dependent low energy electron microscopy study of Ge growth on Si(1 1 3)

✍ Scribed by T. Clausen; Th. Schmidt; J.I. Flege; A. Locatelli; T.O. Mentes; S. Heun; F.Z. Guo; J. Falta

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 381 KB
Volume: 252
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2005.12.021

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Temperature dependent low energy electron microscopy study of Ge growth on Si(1&#xa0;1&#xa0;3)

Temperature dependent low energy electron microscopy study of Ge growth on Si(1 1 3)