Growth temperature dependence of epitaxial Gd2O3 films on Si(1 1 1)
✍ Scribed by G. Niu; B. Vilquin; N. Baboux; C. Plossu; L. Becerra; G. Saint-Grions; G. Hollinger
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 880 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0167-9317
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The substrates used in the experiment were (1 1 1)-oriented ntype Ge wafers with the resistivity of 2-5 V cm. NHO ceramic