Epitaxial growth of Nd2Hf2O7(1 1 1) thin films on Ge(1 1 1) substrates by pulsed laser deposition

✍ Scribed by Feng Wei; Hailing Tu; Jun Du

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 272 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2009.06.063

✦ Synopsis

The substrates used in the experiment were (1 1 1)-oriented ntype Ge wafers with the resistivity of 2-5 V cm. NHO ceramic