✦ LIBER ✦

Solid phase epitaxial growth of Dy-germanide films on Ge(0 0 1) substrates

✍ Scribed by Md. Nurul Kabir Bhuiyan; Mariela Menghini; Jin Won Seo; Jean-Pierre Locquet

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 972 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.09.004

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxial growth of Dy2O3 thin films on

Epitaxial growth of Dy2O3 thin films on epitaxial Dy-germanide films on Ge(0 0 1) substrates

✍ Md. Nurul Kabir Bhuiyan; Mariela Menghini; Jin Won Seo; Jean-Pierre Locquet 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 636 KB

2 O 3 film High-j oxide Ge(0 0 1) substrate Molecular beam epitaxy (MBE) Transmission electron microscopy (TEM) Structural characterization a b s t r a c t Ultra-thin films of Dy are grown on Ge(0 0 1) substrates by molecular beam deposition near room temperature and immediately annealed for solid p

High-resolution X-ray diffraction studie

High-resolution X-ray diffraction studies of combinatorial epitaxial Ge (0 0 1) thin-films on Ge (0 0 1) substrates

✍ Yuncheng Zhong; Yong S. Chu; Brian A. Collins; Frank Tsui 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 308 KB

Epitaxial growth of Fe/MgO/Ge(0 0&#

Epitaxial growth of Fe/MgO/Ge(0 0 1) heterostructures

✍ M. Cantoni; D. Petti; C. Rinaldi; R. Bertacco 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 529 KB

We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top

Studies of Ti- and Ni-germanide Schottky

Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(1 0 0) substrates

✍ Dedong Han; Yi Wang; Dayu Tian; Wei Wang; Xiaoyan Liu; Jinfeng Kang; Ruqi Han 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 175 KB

Epitaxial growth and thermal stability o

Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(0 0 1) substrates

✍ Shaojian Su; Wei Wang; Buwen Cheng; Guangze Zhang; Weixuan Hu; Chunlai Xue; Yuhu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 736 KB

Single-crystal Ge 1 À x Sn x alloys (x ¼ 0.025, 0.052, and 0.078) with diamond cubic structure have been grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE), using high-quality Ge thin films as buffer layers. The Ge 1 À x Sn x alloys are nearly fully strained and have high crystalline qual

Solid phase epitaxy of Ge films on CaF2/

Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)

✍ E.P. Rugeramigabo; C. Deiter; J. Wollschläger 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 469 KB

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 8C. Ge films break

Solid phase epitaxial growth of Dy-germanide films on Ge(0&#xa0;0&#xa0;1) substrates

Solid phase epitaxial growth of Dy-germanide films on Ge(0 0 1) substrates