High quality zinc-blende B x Ga 1Àx As, B x Al 1Àx As, B x Ga 1ÀxÀy In y As and relevant MQW structures containing 10-period BGaAs/GaAs and BGaInAs/GaAs have been successfully grown on exactly-oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethyl
LP-MOCVD growth of ternary BxGa1−xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3
✍ Scribed by Qi Wang; Xiaomin Ren; Feihua Wang; Jianyou Feng; Jihe Lv; Jing Zhou; Shiwei Cai; Hui Huang; Yongqing Huang
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 387 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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