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Growth of BxGa1−xAs, BxAl1−xAs and BxGa1−x−yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition

✍ Scribed by Qi Wang; Xiaomin Ren; Hui Huang; Yongqing Huang; Shiwei Cai

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
300 KB
Volume
40
Category
Article
ISSN
0026-2692

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✦ Synopsis

High quality zinc-blende B x Ga 1Àx As, B x Al 1Àx As, B x Ga 1ÀxÀy In y As and relevant MQW structures containing 10-period BGaAs/GaAs and BGaInAs/GaAs have been successfully grown on exactly-oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminum, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase boron mole fraction.

In this study, the maximum boron composition (x) of 5.8% and 1.3% was achieved at the same growth temperature of 580 1C for bulk B x Ga 1Àx As and B x Al 1Àx As, respectively. 11 K photoluminescence (PL) peak wavelength of lattice-matched B x Ga 1ÀxÀy In y As epilayer with boron composition of about 4% reached 1.24 mm.

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