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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

✍ Scribed by Hiroki Tanno; Masao Sakuraba; Bernd Tillack; Junichi Murota

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 448 KB
Volume: 254
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.132

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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1&#xa0;0&#xa0;0) by ultraclean low-pressure chemical vapor deposition

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