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Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

✍ Scribed by Takashi Yokogawa; Kiyohisa Ishibashi; Masao Sakuraba; Junichi Murota; Yasuhiro Inokuchi; Yasuo Kunii; Harushige Kurokawa

No coin nor oath required. For personal study only.

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Self-limited growth of Si on B atomic-layer formed Ge(1&#xa0;0&#xa0;0) by ultraclean low-pressure CVD system