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Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

✍ Scribed by Takehisa Kurosawa; Tomoyuki Komatsu; Masao Sakuraba; Junichi Murota

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 311 KB
Volume: 8
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2004.09.025

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Electrical properties of W delta doped Si epitaxial films grown on Si(1&#xa0;0&#xa0;0) by ultraclean low-pressure chemical vapor deposition

Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition