✦ LIBER ✦

Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0 0 1) windows

✍ Scribed by M. Halbwax; Lam H. Nguyen; Frédéric Fossard; X. Le Roux; V. Mathet; V. Yam; Dao Tran Cao; D. Bouchier

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 456 KB
Volume: 9
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2006.08.040

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain relaxation of epitaxial CoSi2 and

Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0 0 1) and epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) structures

✍ D.O. Shin; M.R. Sardela Jr.; S.H. Ban; N.-E. Lee; K.-H. Shim 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 324 KB

Kinetics of epitaxial growth of Si and S

Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates

✍ N. Sugiyama; Y. Moriyama; S. Nakaharai; T. Tezuka; T. Mizuno; S. Takagi 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 233 KB

Boron mediation on the growth of Ge quan

Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

✍ P.S. Chen; Z. Pei; Y.H. Peng; S.W. Lee; M.-J. Tsai 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 382 KB

Heavy atomic-layer doping of B in low-te

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

✍ Hiroki Tanno; Masao Sakuraba; Bernd Tillack; Junichi Murota 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 448 KB

Electrical properties of W delta doped S

Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

✍ Takehisa Kurosawa; Tomoyuki Komatsu; Masao Sakuraba; Junichi Murota 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 311 KB

Ultra-high-vacuum chemical vapor deposit

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1−x−yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source

✍ P.S. Chen; S.W. Lee; Y.H. Liu; M.H. Lee; M.-J. Tsai; C.W. Liu 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 359 KB

The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1ÀxÀy Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1ÀxÀy Ge x C y alloys have been grown at a temperature range from 550 to

Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0&#xa0;0&#xa0;1) windows

Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0 0 1) windows