Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1−x−yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source
✍ Scribed by P.S. Chen; S.W. Lee; Y.H. Liu; M.H. Lee; M.-J. Tsai; C.W. Liu
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 359 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1369-8001
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✦ Synopsis
The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1ÀxÀy Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1ÀxÀy Ge x C y alloys have been grown at a temperature range from 550 to 600 1C. The C sub content in Si 1ÀxÀy Ge x C y increases with increasing C 2 H 4 partial pressure under the same SiH 4 and GeH 4 condition. The addition of excessive C 2 H 4 causes the degradation of Si 1ÀxÀy Ge x C y crystallinity, surface roughening and the suppression of Ge incorporation. The C-C double bonds in C 2 H 4 were responsible for the highest percentage of C sub , only 0.2%, incorporated in Si 0.8Ày Ge 0.2 C y . The Ge, B and C concentration were determined by secondary ion mass spectroscopy (SIMS). The total C atoms incorporation efficiency is $0.05. The maximum concentration of C sub in Si 1ÀxÀy Ge x C y increases with the decrease of Ge content. In the ambient of hydride-based CVD at low-growth pressure and temperature, the presence of GeH 4 would impede the incorporation of C sub in Si 1ÀxÀy Ge x C y /Si heterostructure using C 2 H 4 as C source.