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Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

✍ Scribed by P.S. Chen; Z. Pei; Y.H. Peng; S.W. Lee; M.-J. Tsai

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 382 KB
Volume: 108
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2003.11.017

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