Controlling the size of InAs quantum dots on Si1−xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

✍ Scribed by Kenichi Kawaguchi; Hiroji Ebe; Mitsuru Ekawa; Akio Sugama; Yasuhiko Arakawa

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 466 KB
• Volume: 165
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2008.10.006

✦ Synopsis

The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH 3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 × 10 10 cm -2 were obtained.