Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering
β Scribed by H.C. Chen; C.M. Huang; K.F. Liao; S.W. Lee; C.H. Hsu; L.J. Chen
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 227 KB
- Volume
- 237
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The chemisorption of one monolayer Ag atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The adsorption energies (E ad ) of different sites are calculated. It is found that the adsorbed Ag atoms are more favorable on C site (fo
We report a comparison of the plasma-assisted MBE growth of polar (0 0 0 1) and semipolar (1 1 Γ 2 2) -oriented InGaN/GaN quantum dots (QDs) grown simultaneously on GaN templates. The photoluminescence (PL) from semipolar QDs shows a systematical blueshift in comparison to the respective polar sampl