Ionization probability of secondary ions sputtered from Si(1 1 1) and Ge(1 1 1) surfaces
β Scribed by Yasuhiro Sakuma; Masahiko Kato; Shinya Yagi; Kazuo Soda
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 873 KB
- Volume
- 269
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters for protons in h1 0 0i, h1 1 0i and h1 1 1i Si crystal channels is investigated theoretically. The proton energy range considered is between 1 and 10 MeV. The original dechanneling functions are gener
The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i