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Annealing of radiation damage in (1 0 0), (1 1 0) and (1 1 1) MgO single crystals implanted with Ar+ ions

✍ Scribed by I.O. Usov; P.N. Arendt; J.R. Groves; L. Stan; R.F. DePaula

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 279 KB
Volume: 243
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2005.08.124

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✦ Synopsis

The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed in vacuum at temperatures ranging from 600 to 1300 °C for 3 min. Rutherford backscattering spectrometry combined with ion channeling was used to analyze radiation damage and recovery. The results indicated that the radiation damage was stable up to the annealing temperature of $600 °C. At higher annealing temperatures orientation dependent lattice recovery was observed. No complete lattice recovery was achieved, but in (1 1 0) MgO the lattice recovery was more effective than in (1 0 0) and (1 1 1) oriented samples.

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Annealing of radiation damage in (1&#xa0;0&#xa0;0), (1&#xa0;1&#xa0;0) and (1&#xa0;1&#xa0;1) MgO single crystals implanted with Ar+ ions

✦ Synopsis

Annealing of radiation damage in (1 0 0), (1 1 0) and (1 1 1) MgO single crystals implanted with Ar+ ions