๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Investigation of defect structures in InGaN/GaN multiple quantum wells grown on Si(1 1 1) substrate by metalorganic vapor phase epitaxy

โœ Scribed by G.M. Wu; Y.L. Kao

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
504 KB
Volume
401-402
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Controlling the size of InAs quantum dot
Controlling the size of InAs quantum dots on Si1โˆ’xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy
โœ Kenichi Kawaguchi; Hiroji Ebe; Mitsuru Ekawa; Akio Sugama; Yasuhiko Arakawa ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 466 KB

The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increas

Structural, optical, and hydrogenation p
Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy
โœ S.C. Su; Y.M. Lu; Z.Z. Zhang; B.H. Li; D.Z. Shen; B. Yao; J.Y. Zhang; D.X. Zhao; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 367 KB

ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall