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Confinement and concentration of electrons in Si δ-doped AlxGa1 − xAs(x = 0 and 0.35) grown by metalorganic vapour phase epitaxy

✍ Scribed by G. Li; C. Jagadish


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
642 KB
Volume
167
Category
Article
ISSN
0022-0248

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