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Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy

✍ Scribed by S.C. Su; Y.M. Lu; Z.Z. Zhang; B.H. Li; D.Z. Shen; B. Yao; J.Y. Zhang; D.X. Zhao; X.W. Fan


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
367 KB
Volume
403
Category
Article
ISSN
0921-4526

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✦ Synopsis


ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the /0 0 0 1S direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D 0 X), donor-acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied.


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