The intermetallic superconductor magnesium diboride (MgB 2 ) is a promising candidate for use in superconducting electronic devices because its high transition temperature (T c ). These applications require the development of a high-quality film fabrication process. We report the first ever attempt
Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy
β Scribed by S.C. Su; Y.M. Lu; Z.Z. Zhang; B.H. Li; D.Z. Shen; B. Yao; J.Y. Zhang; D.X. Zhao; X.W. Fan
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 367 KB
- Volume
- 403
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the /0 0 0 1S direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D 0 X), donor-acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied.
π SIMILAR VOLUMES
O 2 were 17 mmol/min and 1100 mmol/min, respectively. A low temperature ZnO buffer layer was deposited at 200 8C for 15 min, to thicknesses of 10-150 nm. ZnO epilayers were grown at