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Structural, optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

✍ Scribed by A.SH. Hussein; Z. Hassan; S.M. Thahab; Abu Hassan; M.A. Abid; C.W. Chin


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
715 KB
Volume
406
Category
Article
ISSN
0921-4526

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