Fabrication of as-grown MgB2 films on ZnO (0 0 0 1) substrates by molecular beam epitaxy

✍ Scribed by Y. Harada; T. Takahashi; M. Kuroha; H. Iriuda; Y. Nakanishi; F. Izumida; H. Endo; M. Yoshizawa

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 168 KB
• Volume: 445-448
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/j.physc.2006.06.038

✦ Synopsis

The intermetallic superconductor magnesium diboride (MgB 2 ) is a promising candidate for use in superconducting electronic devices because its high transition temperature (T c ). These applications require the development of a high-quality film fabrication process. We report the first ever attempt to use ZnO (0 0 0 1) substrate to fabricate as-grown MgB 2 films. The lattice mismatch between ZnO and MgB 2 is smaller than for previous reported substrates. The structural and physical properties of the films were investigated by RHEED, XRD, XPS, and resistivity measurements. The resistivity measurements suggest the maximum transition temperature of these films to be 35 K; their resistivity at 300 K is 8.9 lX cm. Our results indicate that these films, when deposited on ZnO substrates, have potential for the fabrication of higher quality MgB 2 films. We also investigate the growth temperature dependence and substrate dependence for superconductivity of MgB 2 films. We discuss the most important conditions and the effectiveness of ZnO substrate for fabricating asgrown MgB 2 films.