Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition
โ Scribed by S.C. Hung; P.J. Huang; C.E. Chan; W.Y. Uen; F. Ren; S.J. Pearton; T.N. Yang; C.C. Chiang; S.M. Lan; G.C. Chi
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 528 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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โฆ Synopsis
O 2 were 17 mmol/min and 1100 mmol/min, respectively. A low temperature ZnO buffer layer was deposited at 200 8C for 15 min, to thicknesses of 10-150 nm. ZnO epilayers were grown at
๐ SIMILAR VOLUMES
ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 8C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have bette
ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall