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The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1−xAs superlattice structures grown by metalorganic vapor phase epitaxy

✍ Scribed by J.M. Redwing; S. Nayak; D.E. Savage; M.G. Lagally; D.F. Dawson-Elli; T.F. Kuech


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
634 KB
Volume
145
Category
Article
ISSN
0022-0248

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