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Formation of heavily P-doped Si epitaxial film on Si(1 0 0) by multiple atomic-layer doping technique

✍ Scribed by Yosuke Shimamune; Masao Sakuraba; Junichi Murota; Bernd Tillack


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
114 KB
Volume
224
Category
Article
ISSN
0169-4332

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Formation of Al–N co-doped p-ZnO/n-Si (1
✍ Manoj Kumar; Sang-Kyun Kim; Se-Young Choi πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 141 KB

Al-N) thin films were grown on n-Si (1 0 0) substrate by RF co-sputtering technique. As-grown ZnO:Al-N film exhibited n-type conductivity whereas on annealing in Ar ambient the conduction of ZnO:Al-N film changes to p-type, typically at 600 8C the high hole concentration of ZnO:Al-N co-doped film wa