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Formation of Al–N co-doped p-ZnO/n-Si (1 0 0) heterojunction structure by RF co-sputtering technique

✍ Scribed by Manoj Kumar; Sang-Kyun Kim; Se-Young Choi

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 141 KB
Volume: 256
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.06.093

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✦ Synopsis

Al-N) thin films were grown on n-Si (1 0 0) substrate by RF co-sputtering technique. As-grown ZnO:Al-N film exhibited n-type conductivity whereas on annealing in Ar ambient the conduction of ZnO:Al-N film changes to p-type, typically at 600 8C the high hole concentration of ZnO:Al-N co-doped film was found to be 2.86 Â 10 19 cm À3 and a low resistivity of 1.85 Â 10 À2 V-cm.

The current-voltage characteristics of the obtained p-ZnO:Al-N/n-Si heterojunction showed good diode like rectifying behavior. Room temperature photoluminescence spectra of annealed co-doped films revealed a dominant peak at 3.24 eV.

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Formation of Al–N co-doped p-ZnO/n-Si (1&#xa0;0&#xa0;0) heterojunction structure by RF co-sputtering technique

✦ Synopsis

Formation of Al–N co-doped p-ZnO/n-Si (1 0 0) heterojunction structure by RF co-sputtering technique