Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

✍ Scribed by Youngcheon Jeong; Masao Sakuraba; Junichi Murota

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 304 KB
• Volume: 8
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2004.09.031

✦ Synopsis

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at the N amount of 5 Â 10 13 cm À2 /layer. Sheet carrier concentration in the temperature region higher than 160 K drastically increases with increase of the measurement temperature. The ionization energy of the donor level is estimated about 150-180 meV and almost independent of the N amount. Measured Hall mobility is as high as that of the uniformly P-doped Si with the P concentration of 10 16 -10 17 cm À3 in the measurement temperature range of 160-300 K.