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Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

โœ Scribed by C.C. Wu; K.C. Lin; S.H. Chan; M.S. Feng; C.Y. Chang

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
605 KB
Volume
19
Category
Article
ISSN
0921-5107

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Electrical properties of N atomic layer
Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition
โœ Youngcheon Jeong; Masao Sakuraba; Junichi Murota ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t