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Beryllium-doped InGaAs grown by low-pressure metalorganic chemical vapor deposition

✍ Scribed by Takashi Kobayashi; Kenji Kurishima; Tadao Ishibashi

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 280 KB
Volume: 142
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)90262-3

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