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Raman scattering studies of Si1-xGex epitaxial layers grown by atmospheric pressure chemical vapor deposition

✍ Scribed by C.H. Perry; Feng Lu; F. Namavar

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
556 KB
Volume
88
Category
Article
ISSN
0038-1098

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Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition
✍ Youngcheon Jeong; Masao Sakuraba; Junichi Murota πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t