𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

✍ Scribed by J. Hållstedt; A. Parent; M. Östling; H.H. Radamson

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
262 KB
Volume
8
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical properties of N atomic layer
Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition
✍ Youngcheon Jeong; Masao Sakuraba; Junichi Murota 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t